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| tmbat 49 small signal schottky diode description general purpose metal to silicon diode featuring very low turn-on voltage and fast switching. this device has integrated protection against ex- cessive voltage such as electrostatic discharges. november 1994 melf (glass) symbol parameter value unit v rrm repetitive peak reverse voltage 80 v i f forward continuous current t i = 70 c 500 ma i frm repetitive peak forward current tp = 1s d 0.5 3a i fsm surge non repetitive forward current t p = 10ms 10 a t stg t j storage and junction temperature range - 65 to + 150 - 65 to + 125 c c t l maximum temperature for soldering during 15s 260 c absolute maximum ratings (limiting values) symbol test conditions value unit r th(j-l) junction-leads 110 c/w thermal resistance * pulse test: t p 300 m s d < 2% . symbol test conditions min. typ. max. unit i r * t j = 25 c vr = 80v 200 m a v f * t j = 25 ci f = 10ma 0.32 v t j = 25 ci f = 100ma 0.42 t j = 25 ci f = 1a 1 static characteristics electrical characteristics symbol test conditions min. typ. max. unit c t j = 25 c f = 1mhz v r = 0v 120 pf v r = 5v 35 dynamic characteristics 1/4
2/3 figure 1. forward current versus forward voltage at low level (typical values). figure 2. forward current versus forward voltage at high level (typical values). figure 3. reverse current versus junction temperature. figure 4. reverse current versus v rrm in per cent. tmbat 49 figure 5. capacitance c versus reverse applied voltage v r (typical values). figure 6. surge non repetitive forward current for a rectangular pulse with t 10 ms. figure 7. - surge non repetitive forward current versus number of cycles. 3/4 tmbat 49 marking: ring at cathode end. weight: 0.15g package mechanical data foot print dimensions (millimeter) melf glass b a c c o / 4/4 ref. dimensions millimeters inches min. max. min. max. a 4.80 5.20 0.19 0.20 b 2.55 2.65 0.10 0.10 c 0.45 0.55 0.02 0.02 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsabi lity for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelec tronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical com ponents in life support dev ices or systems without express written approval of sgs-thomson microelectronics. ? 1994 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - united kingdom - u.s.a. tmbat 49 |
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